Group wiki / Cleanroom processes

FIJI ALD (Al₂O₃)

Al₂O₃ atomic layer deposition on the FIJI, with thickness results and edge-deposition tips.

By Zihuan Liu · Last checked Dec 2023 · Needs check

Migrated from the old Google Sites wiki (Nov 2026). Text and numbers were carried over; photos and screenshots were not. If you have them, add them to assets/wiki/ and link them here. Check numbers against your own run before relying on them.

Recipe

  • On the ALD tool, open the folder named for Zihuan Liu. Recipe: AL2O3_300cycles.
  • Expected result: about 60 nm of Al₂O₃ from 300 cycles.

Thickness vs. cycles

Cycles Measured thickness Implied rate
300 ≈ 60 nm (ellipsometer) ≈ 0.2 nm/cycle
2000 ≈ 200 nm ≈ 0.1 nm/cycle
700 result shown in photos on the old page  

The original page quotes roughly 0.1 nm per cycle and notes that growth is not linear in cycle count. The 300-cycle and 2000-cycle numbers above disagree with a single rate, so measure your own film before relying on either.

To do: whoever next runs this recipe, add your cycles, measured thickness and date to the table.

What it looks like

After the backside SiO₂ of an SOI wafer is removed and 60 nm of Al₂O₃ is deposited, the backside turns noticeably darker. Confirm thickness on the ellipsometer.

Edge deposition on the front side

Some Al₂O₃ wraps around the wafer edge onto the front side.

  • Usually not a problem: a Piranha clean removes it.
  • If your process cannot take Piranha, clip a steel plate over the front side during deposition.

Something wrong or out of date? Fix it: edit this page on GitHub. See Editing this site.

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